Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature: Fid-Bau Portal

Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature

Saitoh, H. / Kimoto, T. / Matsunami, H.

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Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature

Saitoh, H. / Kimoto, T. / Matsunami, H.

Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature

Saitoh, H. / Kimoto, T. / Matsunami, H.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature

Contributors:

Saitoh, H. (author) / Kimoto, T. (author) / Matsunami, H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 997-1000

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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