Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement: Fid-Bau Portal

Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement

Izumi, S. / Fujisawa, H. / Tawara, T. / Ueno, K. / Hiraoka, M.

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Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement

Izumi, S. / Fujisawa, H. / Tawara, T. / Ueno, K. / Hiraoka, M.

Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement

Izumi, S. / Fujisawa, H. / Tawara, T. / Ueno, K. / Hiraoka, M.

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Titel:

Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement

Beteiligte:

Izumi, S. (Autor:in) / Fujisawa, H. (Autor:in) / Tawara, T. (Autor:in) / Ueno, K. (Autor:in) / Hiraoka, M. (Autor:in) / Bergman, P. / Janzen, E.

Erschienen in:

Silicon Carbide and Related Materials 2002 ; 685-688

MATERIALS SCIENCE FORUM ; 433/436

Erscheinungsdatum:

01.01.2003

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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