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Passivation Effect on Channel Recessed 4H-SiC MESFETs
Passivation Effect on Channel Recessed 4H-SiC MESFETs
Passivation Effect on Channel Recessed 4H-SiC MESFETs
Cha, H.-Y. (author) / Thomas, C. I. (author) / Koley, G. (author) / Eastman, L. F. (author) / Spencer, M. G. (author) / Bergman, P. / Janzen, E.
2003-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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