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Improved multi-recessed 4H–SiC MESFETs with double-recessed p-buffer layer
Improved multi-recessed 4H–SiC MESFETs with double-recessed p-buffer layer
Improved multi-recessed 4H–SiC MESFETs with double-recessed p-buffer layer
Jia, Hujun (author) / Zhang, Hang (author) / Luo, Yehui (author) / Yang, Zhihui (author)
Materials science in semiconductor processing ; 40 ; 650-654
2015-01-01
5 pages
Article (Journal)
English
DDC:
621.38152
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