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Improved double-recessed P-buffer 4H-SiC MESFETs with partial heavy doped channel
Improved double-recessed P-buffer 4H-SiC MESFETs with partial heavy doped channel
Improved double-recessed P-buffer 4H-SiC MESFETs with partial heavy doped channel
Jia, Hujun (author) / Yang, Zhihui (author) / Wu, Qiuyuan (author) / Ma, Peimiao (author)
Materials science in semiconductor processing ; 56 ; 213-216
2016-01-01
4 pages
Article (Journal)
English
DDC:
621.38152
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