4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure: Fid-Bau Portal

4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure

Suzuki, S. / Harada, S. / Yatsuo, T. / Kosugi, R. / Senzaki, J. / Fukuda, K.

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4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure

Suzuki, S. / Harada, S. / Yatsuo, T. / Kosugi, R. / Senzaki, J. / Fukuda, K.

4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure

Suzuki, S. / Harada, S. / Yatsuo, T. / Kosugi, R. / Senzaki, J. / Fukuda, K.

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Check availability in my library

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Document information

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Document information

Title:

4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure

Contributors:

Suzuki, S. (author) / Harada, S. (author) / Yatsuo, T. (author) / Kosugi, R. (author) / Senzaki, J. (author) / Fukuda, K. (author) / Bergman, P. / Janzen, E.

Published in:

Silicon Carbide and Related Materials 2002 ; 753-756

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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