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    Interfacial composition and electrical properties of PtSi/Si1-xGex/Si diodes by molecular beam epitaxy (MBE) and pulsed laser deposition (PLD)

    New search for: Li, M. c.
    New search for: Zhao, L. c.
    New search for: Chen, X. k.

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    Interfacial composition and electrical properties of PtSi/Si1-xGex/Si diodes by molecular beam epitaxy (MBE) and pulsed laser deposition (PLD)

    New search for: Li, M. c.
    New search for: Zhao, L. c.
    New search for: Chen, X. k.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Interfacial composition and electrical properties of PtSi/Si1-xGex/Si diodes by molecular beam epitaxy (MBE) and pulsed laser deposition (PLD)

    New search for: Li, M. c.
    New search for: Zhao, L. c.
    New search for: Chen, X. k.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
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    Document information
    Title:

    Interfacial composition and electrical properties of PtSi/Si1-xGex/Si diodes by molecular beam epitaxy (MBE) and pulsed laser deposition (PLD)

    Contributors:

    Li, M. c. (author) / Zhao, L. c. (author) / Chen, X. k. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 219 ; 249-255

    Publication date:

    2003-01-01

    Size:

    7 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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