Nanoscale concentration and strain distribution in pseudomorphic films Si1-xGex/Si processed by pulsed laser induced epitaxy: Fid-Bau Portal

Nanoscale concentration and strain distribution in pseudomorphic films Si1-xGex/Si processed by pulsed laser induced epitaxy

Vincent, L. / Fossard, F. / Kociniewski, T. / Largeau, L. / Cherkashin, N. / Hytch, M. J. / Debarre, D. / Sauvage, T. / Claverie, A. / Boulmer, J.

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Nanoscale concentration and strain distribution in pseudomorphic films Si1-xGex/Si processed by pulsed laser induced epitaxy

Vincent, L. / Fossard, F. / Kociniewski, T. / Largeau, L. / Cherkashin, N. / Hytch, M. J. / Debarre, D. / Sauvage, T. / Claverie, A. / Boulmer, J.

Nanoscale concentration and strain distribution in pseudomorphic films Si1-xGex/Si processed by pulsed laser induced epitaxy

Vincent, L. / Fossard, F. / Kociniewski, T. / Largeau, L. / Cherkashin, N. / Hytch, M. J. / Debarre, D. / Sauvage, T. / Claverie, A. / Boulmer, J.

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Title:

Nanoscale concentration and strain distribution in pseudomorphic films Si1-xGex/Si processed by pulsed laser induced epitaxy

Contributors:

Vincent, L. (author) / Fossard, F. (author) / Kociniewski, T. (author) / Largeau, L. (author) / Cherkashin, N. (author) / Hytch, M. J. (author) / Debarre, D. (author) / Sauvage, T. (author) / Claverie, A. (author) / Boulmer, J. (author)

Published in:

APPLIED SURFACE SCIENCE ; 258 ; 9208-9212

Publication date:

2012-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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Precipitation of Sn in metastable, pseudomorphic Si0.95Sn0.05 films grown by molecular beam epitaxy

Ridder, C. / Fanciulli, M. / Nylandsted Larsen, A. et al. | British Library Online Contents | 2000

Realization of Si~1~-~x~-~yGe~xC~y/Si heterostructures by pulsed-laser-induced epitaxy of C^+ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100) [2403-35]

Boulmer, J. / Desmur-Larre, A. / Guedj, C. et al. | British Library Conference Proceedings | 1995

Carrier concentration and mobility in B doped Si1-xGex

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