MOVPE growth of Si-doped GaAs and AlxGa1-xAs using tertiarybutylarsine (TBA) in pure N2 ambient: Fid-Bau Portal

MOVPE growth of Si-doped GaAs and AlxGa1-xAs using tertiarybutylarsine (TBA) in pure N2 ambient

Huang, G. S. / Tang, X. H. / Zhang, B. L.

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MOVPE growth of Si-doped GaAs and AlxGa1-xAs using tertiarybutylarsine (TBA) in pure N2 ambient

Huang, G. S. / Tang, X. H. / Zhang, B. L.

MOVPE growth of Si-doped GaAs and AlxGa1-xAs using tertiarybutylarsine (TBA) in pure N2 ambient

Huang, G. S. / Tang, X. H. / Zhang, B. L.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

MOVPE growth of Si-doped GaAs and AlxGa1-xAs using tertiarybutylarsine (TBA) in pure N2 ambient

Contributors:

Huang, G. S. (author) / Tang, X. H. (author) / Zhang, B. L. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 171-174

Publication date:

2003-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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