A platform for research: civil engineering, architecture and urbanism
Nitridation of epitaxially grown 6.1 A semiconductors studied by X-ray photoelectron spectroscopy
Nitridation of epitaxially grown 6.1 A semiconductors studied by X-ray photoelectron spectroscopy
Nitridation of epitaxially grown 6.1 A semiconductors studied by X-ray photoelectron spectroscopy
Preisler, E. J. (author) / Strittmatter, R. P. (author) / McGill, T. C. (author) / Hill, C. J. (author)
APPLIED SURFACE SCIENCE ; 222 ; 6-12
2004-01-01
7 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Ultrathin Ionic Films Epitaxially Grown on III-V Semiconductors Studied With Atomic Resolution
Springer Verlag | 2002
|Strain Characterization of Epitaxially-Grown Superlattices by Raman Spectroscopy
Springer Verlag | 2002
|Epitaxially grown metal-organic frameworks
British Library Online Contents | 2012
|Nitridation of InP(100) substrates studied by XPS spectroscopy and electrical analysis
British Library Online Contents | 2006
|X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH~3
British Library Online Contents | 2004
|