X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH~3: Fid-Bau Portal

X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH~3

YingShen, L. / Hashimoto, S. / Abe, K. / Hayashibe, R. / Yamagami, T. / Nakao, M. / Kamimura, K.

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X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH~3

YingShen, L. / Hashimoto, S. / Abe, K. / Hayashibe, R. / Yamagami, T. / Nakao, M. / Kamimura, K.

X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH~3

YingShen, L. / Hashimoto, S. / Abe, K. / Hayashibe, R. / Yamagami, T. / Nakao, M. / Kamimura, K.

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Document information

Title:

X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH~3

Contributors:

YingShen, L. (author) / Hashimoto, S. (author) / Abe, K. (author) / Hayashibe, R. (author) / Yamagami, T. (author) / Nakao, M. (author) / Kamimura, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 1549-1552

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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