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Abstract The anisotropy of the electrical and optical properties of ordered In x Ga1—x P epitaxial layers prepared by low-pressure metalorganic vaporphase epitaxy at a reactor pressure of 20 or 50 mbar was studied. Resistivity measurements using a four-point probe method showed that samples with a low misfit (0 up to —1.5 × 10-3) were electrically uniform. For samples with higher misfit, the anisotropy in the resistivity increased markedly to a maximum of 460. Disordered samples prepared at a growth temperature outside of the “ordering” interval were found to be electrically uniform with respect to lattice mismatch. The band-gap energy reduction caused by the ordering effect closely follows the theoretical prediction of Wei and Zunger. As follows from our results, the band-gap energy of tensile strained (x < 0.485) and ordered In x Ga1_x P conforms to the theoretical predictions made for a degree of order η lower than 0.2.
Abstract The anisotropy of the electrical and optical properties of ordered In x Ga1—x P epitaxial layers prepared by low-pressure metalorganic vaporphase epitaxy at a reactor pressure of 20 or 50 mbar was studied. Resistivity measurements using a four-point probe method showed that samples with a low misfit (0 up to —1.5 × 10-3) were electrically uniform. For samples with higher misfit, the anisotropy in the resistivity increased markedly to a maximum of 460. Disordered samples prepared at a growth temperature outside of the “ordering” interval were found to be electrically uniform with respect to lattice mismatch. The band-gap energy reduction caused by the ordering effect closely follows the theoretical prediction of Wei and Zunger. As follows from our results, the band-gap energy of tensile strained (x < 0.485) and ordered In x Ga1_x P conforms to the theoretical predictions made for a degree of order η lower than 0.2.
Atomic Ordering and its Influence on the Optical and Electrical Properties of InGaP Grown by MOVPE
Novák, J. (author)
2002-01-01
10 pages
Article/Chapter (Book)
Electronic Resource
English
Epitaxial Layer , Lattice Mismatch , Resistivity Anisotropy , Parabolic Interpolation , InGaP Layer Physics , Physics, general , Electronics and Microelectronics, Instrumentation , Surfaces and Interfaces, Thin Films , Characterization and Evaluation of Materials , Physical Chemistry , Condensed Matter Physics
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