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Diffusion length of carriers and excitons in GaN-influence of epilayer microstructure

Godlewski, M. / Lusakowska, E. / Goldys, E. M. / Phillips, M. R. / Bottcher, T. / Figge, S. / Hommel, D. / Prystawko, P. / Leszczynski, M. / Grzegory, I.

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Diffusion length of carriers and excitons in GaN-influence of epilayer microstructure

Godlewski, M. / Lusakowska, E. / Goldys, E. M. / Phillips, M. R. / Bottcher, T. / Figge, S. / Hommel, D. / Prystawko, P. / Leszczynski, M. / Grzegory, I.

Diffusion length of carriers and excitons in GaN-influence of epilayer microstructure

Godlewski, M. / Lusakowska, E. / Goldys, E. M. / Phillips, M. R. / Bottcher, T. / Figge, S. / Hommel, D. / Prystawko, P. / Leszczynski, M. / Grzegory, I.

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Title:

Diffusion length of carriers and excitons in GaN-influence of epilayer microstructure

Contributors:

Godlewski, M. (author) / Lusakowska, E. (author) / Goldys, E. M. (author) / Phillips, M. R. (author) / Bottcher, T. (author) / Figge, S. (author) / Hommel, D. (author) / Prystawko, P. (author) / Leszczynski, M. (author) / Grzegory, I. (author)

Published in:

APPLIED SURFACE SCIENCE ; 223 ; 294-302

Publication date:

2004-01-01

Size:

9 pages

ISSN:

Type of media:

Article (Journal)

Type of material:

Print

Language:

English

Classification:

© Metadata Copyright the British Library Board and other contributors. All rights reserved.

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