Ion-Implantation Induced Defects in ZnO Studied by a Slow Positron Beam: Fid-Bau Portal

Ion-Implantation Induced Defects in ZnO Studied by a Slow Positron Beam

Chen, Z. Q. / Maekawa, M. / Sekiguchi, T. / Suzuki, R. / Kawasuso, A.

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Ion-Implantation Induced Defects in ZnO Studied by a Slow Positron Beam

Chen, Z. Q. / Maekawa, M. / Sekiguchi, T. / Suzuki, R. / Kawasuso, A.

Ion-Implantation Induced Defects in ZnO Studied by a Slow Positron Beam

Chen, Z. Q. / Maekawa, M. / Sekiguchi, T. / Suzuki, R. / Kawasuso, A.

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Document information

Title:

Ion-Implantation Induced Defects in ZnO Studied by a Slow Positron Beam

Contributors:

Chen, Z. Q. (author) / Maekawa, M. (author) / Sekiguchi, T. (author) / Suzuki, R. (author) / Kawasuso, A. (author)

Published in:

MATERIALS SCIENCE FORUM ; 445/446 ; 57-59

Publication date:

2004-01-01

Size:

3 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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