Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    The Study of Defects Induced by the Implantation of O Ions into GaAs by a Slow Positron Beam

    New search for: Fujii, S.
    New search for: Wei, L.
    New search for: Tanigawa, S.
    New search for: Taguchi, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    The Study of Defects Induced by the Implantation of O Ions into GaAs by a Slow Positron Beam

    New search for: Fujii, S.
    New search for: Wei, L.
    New search for: Tanigawa, S.
    New search for: Taguchi, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    The Study of Defects Induced by the Implantation of O Ions into GaAs by a Slow Positron Beam

    New search for: Fujii, S.
    New search for: Wei, L.
    New search for: Tanigawa, S.
    New search for: Taguchi, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    The Study of Defects Induced by the Implantation of O Ions into GaAs by a Slow Positron Beam

    Contributors:

    Fujii, S. (author) / Wei, L. (author) / Tanigawa, S. (author) / Taguchi, T.

    Published in:

    Shallow Impurities in Semiconductors ; 411

    MATERIALS SCIENCE FORUM

    Publication date:

    1993-01-01

    Size:

    411 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Ion-Implantation Induced Defects in ZnO Studied by a Slow Positron Beam

    Chen, Z. Q. / Maekawa, M. / Sekiguchi, T. et al. | British Library Online Contents | 2004

    Slow Positron Beam Investigations of Defects Caused by B^+ Implantation into Epitaxial 6H-SiC

    Anwand, W. / Brauer, G. / Kuriplach, J. et al. | British Library Online Contents | 2004

    Applying slow positrons to the study of ion implantation induced defects in GaAs

    Knights, A.P. / Malik, F. / Coleman, P.G. et al. | British Library Online Contents | 1999

    Slow positron beam study of corrosion-related defects in pure iron

    Wu, Y. C. / Chen, Y. Q. / Wang, B. et al. | British Library Online Contents | 2006

    Evolution of ion implantation-caused vacancy-type defects in 6H-SiC probed by slow positron implantation spectroscopy

    Anwand, W. / Brauer, G. / Skorupa, W. | British Library Online Contents | 2001

    Back to top