Effect of Implanted Ion Mass and Incident Energy on Defect and Ion Depth-Distributions in Ion-Implanted Si: Fid-Bau Portal

Effect of Implanted Ion Mass and Incident Energy on Defect and Ion Depth-Distributions in Ion-Implanted Si

Hirata, K. / Kobayashi, Y.

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Effect of Implanted Ion Mass and Incident Energy on Defect and Ion Depth-Distributions in Ion-Implanted Si

Hirata, K. / Kobayashi, Y.

Effect of Implanted Ion Mass and Incident Energy on Defect and Ion Depth-Distributions in Ion-Implanted Si

Hirata, K. / Kobayashi, Y.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Effect of Implanted Ion Mass and Incident Energy on Defect and Ion Depth-Distributions in Ion-Implanted Si

Contributors:

Hirata, K. (author) / Kobayashi, Y. (author)

Published in:

MATERIALS SCIENCE FORUM ; 445/446 ; 108-110

Publication date:

2004-01-01

Size:

3 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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