A platform for research: civil engineering, architecture and urbanism
Defect Profiling with Low Energy Positrons of Nitrogen Implanted Silicon
Defect Profiling with Low Energy Positrons of Nitrogen Implanted Silicon
Defect Profiling with Low Energy Positrons of Nitrogen Implanted Silicon
Van der Werf, D. P. (author) / Saleh, A. S. (author) / Towner, A. (author) / Nathwani, M. (author) / Taylor, J. (author) / Rice-Evans, P. C. (author) / Bull, S. J. (author) / Jean, Y. C. / Eldrup, M. / Schrader, D. M.
1997-01-01
3 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Improved defect profiling with slow positrons
British Library Online Contents | 2002
|Evolution of Defect Profiles in He-Implanted Silicon Studied by Slow Positrons
British Library Online Contents | 1997
|Defect Identification with Positrons
British Library Online Contents | 2001
|Characterization of vacancy-like defects in boron-implanted silicon with slow positrons
British Library Online Contents | 1997
|Thermal Evolution of Defects in H-Implanted Silicon Investigated by Slow Positrons
British Library Online Contents | 1995
|