Selective epitaxial growth of Ge quantum dots on patterned SiO2/Si(0 0 1) surfaces: Fid-Bau Portal

Selective epitaxial growth of Ge quantum dots on patterned SiO2/Si(0 0 1) surfaces

Nguyen, L. H. / LeThanh, V. / Debarre, D. / Yam, V. / Halbwax, M. / El Kurdi, M. / Bouchier, D. / Rosner, P. / Becker, M. / Benamara, M.

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Selective epitaxial growth of Ge quantum dots on patterned SiO2/Si(0 0 1) surfaces

Nguyen, L. H. / LeThanh, V. / Debarre, D. / Yam, V. / Halbwax, M. / El Kurdi, M. / Bouchier, D. / Rosner, P. / Becker, M. / Benamara, M.

Selective epitaxial growth of Ge quantum dots on patterned SiO2/Si(0 0 1) surfaces

Nguyen, L. H. / LeThanh, V. / Debarre, D. / Yam, V. / Halbwax, M. / El Kurdi, M. / Bouchier, D. / Rosner, P. / Becker, M. / Benamara, M.

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Document information

Title:

Selective epitaxial growth of Ge quantum dots on patterned SiO2/Si(0 0 1) surfaces

Contributors:

Nguyen, L. H. (author) / LeThanh, V. (author) / Debarre, D. (author) / Yam, V. (author) / Halbwax, M. (author) / El Kurdi, M. (author) / Bouchier, D. (author) / Rosner, P. (author) / Becker, M. (author) / Benamara, M. (author)

Published in:

APPLIED SURFACE SCIENCE ; 224 ; 134-138

Publication date:

2004-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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