A platform for research: civil engineering, architecture and urbanism
Control of band discontinuity at III-V semiconductor interface by Si intralayers
Control of band discontinuity at III-V semiconductor interface by Si intralayers
Control of band discontinuity at III-V semiconductor interface by Si intralayers
Ekpunobi, A. J. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 107 ; 241-243
2004-01-01
3 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Determination of the conduction band discontinuity of a semiconductor n-N heterojunction
British Library Online Contents | 1994
|Element-Embedded Localization Band Based on Regularized Displacement Discontinuity
Online Contents | 1996
|Kinematic Discontinuity Analysi
IuD Bahn | 2001
|Conduction band discontinuity and electron mobility in a strained Si/SiGe heterostructure
British Library Online Contents | 1996
|Stable debonding at discontinuity
British Library Conference Proceedings | 2007
|