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    Conduction band discontinuity and electron mobility in a strained Si/SiGe heterostructure

    New search for: Garchery, L.
    New search for: Sagnes, I.
    New search for: Badoz, P. A.

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    Conduction band discontinuity and electron mobility in a strained Si/SiGe heterostructure

    New search for: Garchery, L.
    New search for: Sagnes, I.
    New search for: Badoz, P. A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Conduction band discontinuity and electron mobility in a strained Si/SiGe heterostructure

    New search for: Garchery, L.
    New search for: Sagnes, I.
    New search for: Badoz, P. A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Conduction band discontinuity and electron mobility in a strained Si/SiGe heterostructure

    Contributors:

    Garchery, L. (author) / Sagnes, I. (author) / Badoz, P. A. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 102 ; 202-207

    Publication date:

    1996-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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