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    Non-stoichiometric growth of GaAs by the vapour pressure controlled Czochralski (VCz) method without B2O3 encapsulation

    New search for: Kiessling, F. M.
    New search for: Neubert, M.
    New search for: Rudolph, P.
    New search for: Ulrici, W.

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    Non-stoichiometric growth of GaAs by the vapour pressure controlled Czochralski (VCz) method without B2O3 encapsulation

    New search for: Kiessling, F. M.
    New search for: Neubert, M.
    New search for: Rudolph, P.
    New search for: Ulrici, W.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Non-stoichiometric growth of GaAs by the vapour pressure controlled Czochralski (VCz) method without B2O3 encapsulation

    New search for: Kiessling, F. M.
    New search for: Neubert, M.
    New search for: Rudolph, P.
    New search for: Ulrici, W.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Non-stoichiometric growth of GaAs by the vapour pressure controlled Czochralski (VCz) method without B2O3 encapsulation

    Contributors:

    Kiessling, F. M. (author) / Neubert, M. (author) / Rudolph, P. (author) / Ulrici, W. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 303-306

    Publication date:

    2003-01-01

    Size:

    4 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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