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Carbon nanometer films prepared by plasma-based ion implantation on single crystalline Si wafer

Liao, J. X. / Liu, W. M. / Xu, T. / Xue, Q. J.

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Carbon nanometer films prepared by plasma-based ion implantation on single crystalline Si wafer

Liao, J. X. / Liu, W. M. / Xu, T. / Xue, Q. J.

Carbon nanometer films prepared by plasma-based ion implantation on single crystalline Si wafer

Liao, J. X. / Liu, W. M. / Xu, T. / Xue, Q. J.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Carbon nanometer films prepared by plasma-based ion implantation on single crystalline Si wafer

Contributors:

Liao, J. X. (author) / Liu, W. M. (author) / Xu, T. (author) / Xue, Q. J. (author)

Published in:

APPLIED SURFACE SCIENCE ; 226 ; 387-392

Publication date:

2004-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

Yue, L. P. / Yao, W. / Qi, Z. et al. | British Library Online Contents | 1994

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Micrometer- and Nanometer-Sized Organic Single-Crystalline Transistors

Tang, Q. / Jiang, L. / Tong, Y. et al. | British Library Online Contents | 2008

Nanometer-size dispersions of iron in sapphire prepared by ion implantation and annealing

McHargue, C. J. / Ren, S. X. / Hunn, J. D. | British Library Online Contents | 1998