Formation of C54 TiSi2 thin films by using high-temperature sputtering and rapid thermal annealing: Fid-Bau Portal

Formation of C54 TiSi2 thin films by using high-temperature sputtering and rapid thermal annealing

Lee, S. J. / Kim, D. Y. / Kim, T. W.

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Formation of C54 TiSi2 thin films by using high-temperature sputtering and rapid thermal annealing

Lee, S. J. / Kim, D. Y. / Kim, T. W.

Formation of C54 TiSi2 thin films by using high-temperature sputtering and rapid thermal annealing

Lee, S. J. / Kim, D. Y. / Kim, T. W.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Formation of C54 TiSi2 thin films by using high-temperature sputtering and rapid thermal annealing

Contributors:

Lee, S. J. (author) / Kim, D. Y. (author) / Kim, T. W. (author)

Published in:

JOURNAL OF MATERIALS SCIENCE ; 39 ; 3203-3205

Publication date:

2004-01-01

Size:

3 pages

ISSN:

0022-2461

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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