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MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement
MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement
MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement
Vellianitis, G. (author) / Apostolopoulos, G. (author) / Mavrou, G. (author) / Argyropoulos, K. (author) / Dimoulas, A. (author) / Hooker, J. C. (author) / Conard, T. (author) / Butcher, M. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 109 ; 85-88
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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