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MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement
MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement
MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement
Vellianitis, G. (Autor:in) / Apostolopoulos, G. (Autor:in) / Mavrou, G. (Autor:in) / Argyropoulos, K. (Autor:in) / Dimoulas, A. (Autor:in) / Hooker, J. C. (Autor:in) / Conard, T. (Autor:in) / Butcher, M. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 109 ; 85-88
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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