Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation

Hasegawa, J. / Konishi, K. / Nakamura, Y. et al. | British Library Online Contents | 2014

Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode

Harada, S. / Namikawa, Y. / Sugie, R. | British Library Online Contents | 2009

Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11&unknown;0) Face

Kojima, K. / Ohno, T. / Fujimoto, T. et al. | British Library Online Contents | 2003

Temperature dependence of current-voltage characteristics of Ag/p-SnS Schottky barrier diodes

Sahin, M. / Safak, H. / Tugluoglu, N. et al. | British Library Online Contents | 2005

Impact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier Diodes

Moghadam, H.A. / Dimitrijev, S. / Han, J.S. | British Library Online Contents | 2014