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Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETs
Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETs
Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETs
Kerlain, A. (author) / Morvan, E. (author) / Dua, C. (author) / Caillas, N. (author) / Brylinski, C. (author)
MATERIALS SCIENCE FORUM ; 457/460 ; 1177-1180
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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