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Investigation of SiO~2/SiC Interface using Positron Annihilation Technique

Maekawa, M. / Kawasuso, A. / Yoshikawa, M. / Ichimiya, A.

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Investigation of SiO~2/SiC Interface using Positron Annihilation Technique

Maekawa, M. / Kawasuso, A. / Yoshikawa, M. / Ichimiya, A.

Investigation of SiO~2/SiC Interface using Positron Annihilation Technique

Maekawa, M. / Kawasuso, A. / Yoshikawa, M. / Ichimiya, A.

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Document information

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Document information

Title:

Investigation of SiO~2/SiC Interface using Positron Annihilation Technique

Contributors:

Maekawa, M. (author) / Kawasuso, A. (author) / Yoshikawa, M. (author) / Ichimiya, A. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 1301-1304

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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