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    Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy

    New search for: Onojima, N.
    New search for: Kaido, J.
    New search for: Suda, J.
    New search for: Kimoto, T.
    New search for: Matsunami, H.

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    Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy

    New search for: Onojima, N.
    New search for: Kaido, J.
    New search for: Suda, J.
    New search for: Kimoto, T.
    New search for: Matsunami, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy

    New search for: Onojima, N.
    New search for: Kaido, J.
    New search for: Suda, J.
    New search for: Kimoto, T.
    New search for: Matsunami, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy

    Contributors:

    Onojima, N. (author) / Kaido, J. (author) / Suda, J. (author) / Kimoto, T. (author) / Matsunami, H. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 457/460 ; 1569-1572

    Publication date:

    2004-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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