Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates: Fid-Bau Portal

Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates

Fossard, F. / Brault, J. / Gogneau, N. / Monroy, E. / Enjalbert, F. / Dang, L. S. / Bellet-Amalric, E. / Monnoye, S. / Mank, H. / Daudin, B.

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Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates

Fossard, F. / Brault, J. / Gogneau, N. / Monroy, E. / Enjalbert, F. / Dang, L. S. / Bellet-Amalric, E. / Monnoye, S. / Mank, H. / Daudin, B.

Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates

Fossard, F. / Brault, J. / Gogneau, N. / Monroy, E. / Enjalbert, F. / Dang, L. S. / Bellet-Amalric, E. / Monnoye, S. / Mank, H. / Daudin, B.

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Document information

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Document information

Title:

Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates

Contributors:

Fossard, F. (author) / Brault, J. (author) / Gogneau, N. (author) / Monroy, E. (author) / Enjalbert, F. (author) / Dang, L. S. (author) / Bellet-Amalric, E. (author) / Monnoye, S. (author) / Mank, H. (author) / Daudin, B. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 1577-1580

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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