Preferential Orientation Growth of AlN Thin Films on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy: Fid-Bau Portal

Preferential Orientation Growth of AlN Thin Films on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Chuah, L.S. / Hassan, Z. / Hassan, H.A.

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Preferential Orientation Growth of AlN Thin Films on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Chuah, L.S. / Hassan, Z. / Hassan, H.A.

Preferential Orientation Growth of AlN Thin Films on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Chuah, L.S. / Hassan, Z. / Hassan, H.A.

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Document information

Title:

Preferential Orientation Growth of AlN Thin Films on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Contributors:

Chuah, L.S. (author) / Hassan, Z. (author) / Hassan, H.A. (author)

Published in:

SURFACE REVIEW AND LETTERS ; 16 ; 925-928

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0218-625X

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 530.417

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