Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC Substrates

    New search for: Helman, A.
    New search for: Tchernycheva, M.
    New search for: Moumanis, K.
    New search for: Lusson, A.
    New search for: Warde, E.
    New search for: Julien, F.
    New search for: Monroy, E.
    New search for: Fossard, F.
    New search for: Daudin, B.
    New search for: Dang, L. S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC Substrates

    New search for: Helman, A.
    New search for: Tchernycheva, M.
    New search for: Moumanis, K.
    New search for: Lusson, A.
    New search for: Warde, E.
    New search for: Julien, F.
    New search for: Monroy, E.
    New search for: Fossard, F.
    New search for: Daudin, B.
    New search for: Dang, L. S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC Substrates

    New search for: Helman, A.
    New search for: Tchernycheva, M.
    New search for: Moumanis, K.
    New search for: Lusson, A.
    New search for: Warde, E.
    New search for: Julien, F.
    New search for: Monroy, E.
    New search for: Fossard, F.
    New search for: Daudin, B.
    New search for: Dang, L. S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC Substrates

    Contributors:

    Helman, A. (author) / Tchernycheva, M. (author) / Moumanis, K. (author) / Lusson, A. (author) / Warde, E. (author) / Julien, F. (author) / Monroy, E. (author) / Fossard, F. (author) / Daudin, B. (author) / Dang, L. S. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 457/460 ; 1589-1592

    Publication date:

    2004-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Resonant tunneling and intraband transitions in quantum wells and their device applications

    Liu, Hui Chun | TIBKAT | 1987

    In Situ Doping of 3C-SiC Grown on (0001) Sapphire Substrates by LPCVD

    Sun, G. S. / Luo, M. C. / Wang, L. et al. | British Library Online Contents | 2002

    Caracterization of AIN buffer layers on (0001)-sapphire substrates

    Le Vaillant, Y. M. / Bisaro, R. / Olivier, J. et al. | British Library Online Contents | 1997

    Photoluminescence investigation of ferromagnetic Ga1-xMnxN layers with GaN templates grown on sapphire (0001) substrates

    Yoon, I. T. / Ham, M. H. / Myoung, J. M. | British Library Online Contents | 2009

    Microstructural studies of GaN grown on (0001) sapphire by MOVPE

    Vennegues, P. / Beaumont, B. / Gibart, P. | British Library Online Contents | 1997

    Back to top