Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition: Fid-Bau Portal

Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition

Jeong, J. K. / Song, H. K. / Um, M. Y. / Kim, H. J. / Seo, H. C. / Yoon, E. / Hwang, C. S.

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Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition

Jeong, J. K. / Song, H. K. / Um, M. Y. / Kim, H. J. / Seo, H. C. / Yoon, E. / Hwang, C. S.

Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition

Jeong, J. K. / Song, H. K. / Um, M. Y. / Kim, H. J. / Seo, H. C. / Yoon, E. / Hwang, C. S.

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Title:

Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition

Contributors:

Jeong, J. K. (author) / Song, H. K. (author) / Um, M. Y. (author) / Kim, H. J. (author) / Seo, H. C. (author) / Yoon, E. (author) / Hwang, C. S. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 1597-1600

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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