High CW Power 0.3 mum Gate AlGaN/GaN HEMTs Grown by MBE on Sapphire: Fid-Bau Portal

High CW Power 0.3 mum Gate AlGaN/GaN HEMTs Grown by MBE on Sapphire

Desmaris, V. / Eriksson, J. / Rorsman, N. / Zirath, H.

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High CW Power 0.3 mum Gate AlGaN/GaN HEMTs Grown by MBE on Sapphire

Desmaris, V. / Eriksson, J. / Rorsman, N. / Zirath, H.

High CW Power 0.3 mum Gate AlGaN/GaN HEMTs Grown by MBE on Sapphire

Desmaris, V. / Eriksson, J. / Rorsman, N. / Zirath, H.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

High CW Power 0.3 mum Gate AlGaN/GaN HEMTs Grown by MBE on Sapphire

Contributors:

Desmaris, V. (author) / Eriksson, J. (author) / Rorsman, N. (author) / Zirath, H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 1629-1632

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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