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    Study of Dislocation Mobility in 4H SiC by X-Ray Transmission Topography, Chemical Etching and Transmission Electron Microscopy

    New search for: Idrissi, H.
    New search for: Lancin, M.
    New search for: Regula, G.
    New search for: Pichaud, B.

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    Study of Dislocation Mobility in 4H SiC by X-Ray Transmission Topography, Chemical Etching and Transmission Electron Microscopy

    New search for: Idrissi, H.
    New search for: Lancin, M.
    New search for: Regula, G.
    New search for: Pichaud, B.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Study of Dislocation Mobility in 4H SiC by X-Ray Transmission Topography, Chemical Etching and Transmission Electron Microscopy

    New search for: Idrissi, H.
    New search for: Lancin, M.
    New search for: Regula, G.
    New search for: Pichaud, B.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Study of Dislocation Mobility in 4H SiC by X-Ray Transmission Topography, Chemical Etching and Transmission Electron Microscopy

    Contributors:

    Idrissi, H. (author) / Lancin, M. (author) / Regula, G. (author) / Pichaud, B. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 457/460 ; 355-358

    Publication date:

    2004-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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