Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy: Fid-Bau Portal

Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy

Sugawara, Y. / Yao, Y.Z. / Ishikawa, Y. / Danno, K. / Suzuki, H. / Bessho, T. / Yamaguchi, S. / Nishikawa, K. / Ikuhara, Y.

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Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy

Sugawara, Y. / Yao, Y.Z. / Ishikawa, Y. / Danno, K. / Suzuki, H. / Bessho, T. / Yamaguchi, S. / Nishikawa, K. / Ikuhara, Y.

Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy

Sugawara, Y. / Yao, Y.Z. / Ishikawa, Y. / Danno, K. / Suzuki, H. / Bessho, T. / Yamaguchi, S. / Nishikawa, K. / Ikuhara, Y.

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Title:

Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy

Contributors:

Sugawara, Y. (author) / Yao, Y.Z. (author) / Ishikawa, Y. (author) / Danno, K. (author) / Suzuki, H. (author) / Bessho, T. (author) / Yamaguchi, S. (author) / Nishikawa, K. (author) / Ikuhara, Y. (author) / Okumura, H.

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 366-369

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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