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Si-TiO2 interface evolution at prolonged annealing in low vacuum or N2O ambient
Si-TiO2 interface evolution at prolonged annealing in low vacuum or N2O ambient
Si-TiO2 interface evolution at prolonged annealing in low vacuum or N2O ambient
Erkov, V. G. (author) / Devyatova, S. F. (author) / Molodstova, E. L. (author) / Malsteva, T. V. (author) / Yanovskii, U. A. (author)
APPLIED SURFACE SCIENCE ; 166 ; 51-56
2000-01-01
6 pages
Article (Journal)
English
DDC:
621.35
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