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Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes
Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes
Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes
Liu, J. Q. (author) / Skowronski, M. (author) / Hallin, C. (author) / Soderholm, R. (author) / Lendenmann, H. (author)
MATERIALS SCIENCE FORUM ; 389/393 ; 1281-1284
2002-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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