Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes
Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes
Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes
Twigg, M. E. (Autor:in) / Stahlbush, R. E. (Autor:in) / Fatemi, M. (Autor:in) / Arthur, S. D. (Autor:in) / Fedison, J. B. (Autor:in) / Tucker, J. B. (Autor:in) / Wang, S. (Autor:in)
MATERIALS SCIENCE FORUM ; 457/460 ; 537-542
01.01.2004
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
A Model for Crack-Induced Nucleation of Dislocations, Complex Stacking Faults and Twins
British Library Online Contents | 2005
|Identification of partial dislocations and faults in cubic Al~3Ti
British Library Online Contents | 1994
|Recombination Behavior of Stacking Faults in SiC p-i-n Diodes
British Library Online Contents | 2006
|Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes
British Library Online Contents | 2002
|Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes
British Library Online Contents | 2003
|