Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation Method: Fid-Bau Portal

Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation Method

Seo, S. H. / Park, J. H. / Song, J. S. / Oh, M. H.

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Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation Method

Seo, S. H. / Park, J. H. / Song, J. S. / Oh, M. H.

Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation Method

Seo, S. H. / Park, J. H. / Song, J. S. / Oh, M. H.

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Check availability in my library

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Document information

Title:

Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation Method

Contributors:

Seo, S. H. (author) / Park, J. H. (author) / Song, J. S. (author) / Oh, M. H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 625-628

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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