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    Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy

    New search for: Fujiwara, Y.
    New search for: Nonogaki, Y.
    New search for: Oga, R.
    New search for: Koizumi, A.
    New search for: Takeda, Y.

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    Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy

    New search for: Fujiwara, Y.
    New search for: Nonogaki, Y.
    New search for: Oga, R.
    New search for: Koizumi, A.
    New search for: Takeda, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy

    New search for: Fujiwara, Y.
    New search for: Nonogaki, Y.
    New search for: Oga, R.
    New search for: Koizumi, A.
    New search for: Takeda, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy

    Contributors:

    Fujiwara, Y. (author) / Nonogaki, Y. (author) / Oga, R. (author) / Koizumi, A. (author) / Takeda, Y. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 216 ; 564-568

    Publication date:

    2003-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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