A platform for research: civil engineering, architecture and urbanism
Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy
Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy
Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy
Fujiwara, Y. (author) / Nonogaki, Y. (author) / Oga, R. (author) / Koizumi, A. (author) / Takeda, Y. (author)
APPLIED SURFACE SCIENCE ; 216 ; 564-568
2003-01-01
5 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2003
|Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires
British Library Online Contents | 2017
|Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires
British Library Online Contents | 2017
|