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    Effect of deposition conditions and annealing on W Schottky contacts on n-GaN

    New search for: Mehandru, R.
    New search for: Kang, S.
    New search for: Kim, S.
    New search for: Ren, F.
    New search for: Kravchenko, I.
    New search for: Lewis, W.
    New search for: Pearton, S. J.

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    Effect of deposition conditions and annealing on W Schottky contacts on n-GaN

    New search for: Mehandru, R.
    New search for: Kang, S.
    New search for: Kim, S.
    New search for: Ren, F.
    New search for: Kravchenko, I.
    New search for: Lewis, W.
    New search for: Pearton, S. J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Effect of deposition conditions and annealing on W Schottky contacts on n-GaN

    New search for: Mehandru, R.
    New search for: Kang, S.
    New search for: Kim, S.
    New search for: Ren, F.
    New search for: Kravchenko, I.
    New search for: Lewis, W.
    New search for: Pearton, S. J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Effect of deposition conditions and annealing on W Schottky contacts on n-GaN

    Contributors:

    Mehandru, R. (author) / Kang, S. (author) / Kim, S. (author) / Ren, F. (author) / Kravchenko, I. (author) / Lewis, W. (author) / Pearton, S. J. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 7 ; 95-98

    Publication date:

    2004-01-01

    Size:

    4 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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