Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Formation of erbium-silicide as source and drain for decananometer-scale Schottky barrier metal-oxide-semiconductor field-effect transistors

    New search for: Jang, M.
    New search for: Kim, Y.
    New search for: Shin, J.
    New search for: Lee, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Formation of erbium-silicide as source and drain for decananometer-scale Schottky barrier metal-oxide-semiconductor field-effect transistors

    New search for: Jang, M.
    New search for: Kim, Y.
    New search for: Shin, J.
    New search for: Lee, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Formation of erbium-silicide as source and drain for decananometer-scale Schottky barrier metal-oxide-semiconductor field-effect transistors

    New search for: Jang, M.
    New search for: Kim, Y.
    New search for: Shin, J.
    New search for: Lee, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Formation of erbium-silicide as source and drain for decananometer-scale Schottky barrier metal-oxide-semiconductor field-effect transistors

    Contributors:

    Jang, M. (author) / Kim, Y. (author) / Shin, J. (author) / Lee, S. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 114/115 ; 51-55

    Publication date:

    2004-01-01

    Size:

    5 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Impact of heavy ions on a-Si:H/PolySi bilayer thin film transistors with Schottky barrier source and drain based on Nickel Silicide

    Deepak K. Sharma / Vivek Kumar | DOAJ | 2024

    Free access

    Simulations of Schottky-barrier nanowire field effect transistors

    Jaehyun Lee, / Chiyui Ahn, / Mincheol Shin, | IEEE | 2006

    Device simulation for decananometer MOSFETs

    Sangiorgi, E. / Palestri, P. / Esseni, D. et al. | British Library Online Contents | 2003

    Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces

    Tung, R. T. | Springer Verlag | 1990

    Schottky-Ohmic Transition in Nickel Silicide/SiC-4H System: the Effect of Non Uniform Schottky Barrier

    La Via, F. / Roccaforte, F. / Raineri, V. et al. | British Library Online Contents | 2004

    Back to top