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Simulations of Schottky-barrier nanowire field effect transistors
Quantum simulations of Schottky-barrier silicon nanowire field effect transistors and carbon nanotube field effect transistors have been carried out by solving the Poisson’s equation and non-equilibrium Green’s function self-consistently and their device characteristics are investigated.
Simulations of Schottky-barrier nanowire field effect transistors
Quantum simulations of Schottky-barrier silicon nanowire field effect transistors and carbon nanotube field effect transistors have been carried out by solving the Poisson’s equation and non-equilibrium Green’s function self-consistently and their device characteristics are investigated.
Simulations of Schottky-barrier nanowire field effect transistors
Jaehyun Lee, (author) / Chiyui Ahn, (author) / Mincheol Shin, (author)
2006-10-01
512944 byte
Conference paper
Electronic Resource
English
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