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    Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p-n junction diodes

    New search for: Poyai, A.
    New search for: Rittaporn, I.
    New search for: Simoen, E.
    New search for: Claeys, C.
    New search for: Rooyackers, R.

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    Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p-n junction diodes

    New search for: Poyai, A.
    New search for: Rittaporn, I.
    New search for: Simoen, E.
    New search for: Claeys, C.
    New search for: Rooyackers, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p-n junction diodes

    New search for: Poyai, A.
    New search for: Rittaporn, I.
    New search for: Simoen, E.
    New search for: Claeys, C.
    New search for: Rooyackers, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p-n junction diodes

    Contributors:

    Poyai, A. (author) / Rittaporn, I. (author) / Simoen, E. (author) / Claeys, C. (author) / Rooyackers, R. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 114/115 ; 372-375

    Publication date:

    2004-01-01

    Size:

    4 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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