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Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p-n junction diodes
Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p-n junction diodes
Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p-n junction diodes
Poyai, A. (Autor:in) / Rittaporn, I. (Autor:in) / Simoen, E. (Autor:in) / Claeys, C. (Autor:in) / Rooyackers, R. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 114/115 ; 372-375
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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