Si epitaxial growth on atomic-order nitrided Si(100) using electron cyclotron resonance plasma: Fid-Bau Portal

Si epitaxial growth on atomic-order nitrided Si(100) using electron cyclotron resonance plasma

Mori, M. / Seino, T. / Muto, D. / Sakuraba, M. / Murota, J.

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Si epitaxial growth on atomic-order nitrided Si(100) using electron cyclotron resonance plasma

Mori, M. / Seino, T. / Muto, D. / Sakuraba, M. / Murota, J.

Si epitaxial growth on atomic-order nitrided Si(100) using electron cyclotron resonance plasma

Mori, M. / Seino, T. / Muto, D. / Sakuraba, M. / Murota, J.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Si epitaxial growth on atomic-order nitrided Si(100) using electron cyclotron resonance plasma

Contributors:

Mori, M. (author) / Seino, T. (author) / Muto, D. (author) / Sakuraba, M. (author) / Murota, J. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 65-68

Publication date:

2005-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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