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Si epitaxial growth on atomic-order nitrided Si(100) using electron cyclotron resonance plasma
Si epitaxial growth on atomic-order nitrided Si(100) using electron cyclotron resonance plasma
Si epitaxial growth on atomic-order nitrided Si(100) using electron cyclotron resonance plasma
Mori, M. (Autor:in) / Seino, T. (Autor:in) / Muto, D. (Autor:in) / Sakuraba, M. (Autor:in) / Murota, J. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 65-68
01.01.2005
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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