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    pMOSFETs with recessed and selectively regrown Si1-xGex source/drain junctions

    New search for: Isheden, C.
    New search for: Hellstrom, P. E.
    New search for: von Haartman, M.
    New search for: Radamson, H. H.
    New search for: Ostling, M.

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    pMOSFETs with recessed and selectively regrown Si1-xGex source/drain junctions

    New search for: Isheden, C.
    New search for: Hellstrom, P. E.
    New search for: von Haartman, M.
    New search for: Radamson, H. H.
    New search for: Ostling, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    pMOSFETs with recessed and selectively regrown Si1-xGex source/drain junctions

    New search for: Isheden, C.
    New search for: Hellstrom, P. E.
    New search for: von Haartman, M.
    New search for: Radamson, H. H.
    New search for: Ostling, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    pMOSFETs with recessed and selectively regrown Si1-xGex source/drain junctions

    Contributors:

    Isheden, C. (author) / Hellstrom, P. E. (author) / von Haartman, M. (author) / Radamson, H. H. (author) / Ostling, M. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 359-362

    Publication date:

    2005-01-01

    Size:

    4 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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