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Short channel effect improved strained-Si:C-source/drain PMOSFETs

Lee, M. H. / Chang, S. T. / Maikap, S. / Shen, K. W. / Wang, W. C.

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Short channel effect improved strained-Si:C-source/drain PMOSFETs

Lee, M. H. / Chang, S. T. / Maikap, S. / Shen, K. W. / Wang, W. C.

Short channel effect improved strained-Si:C-source/drain PMOSFETs

Lee, M. H. / Chang, S. T. / Maikap, S. / Shen, K. W. / Wang, W. C.

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Check availability in my library

Order at Subito €

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Document information

Title:

Short channel effect improved strained-Si:C-source/drain PMOSFETs

Contributors:

Lee, M. H. (author) / Chang, S. T. (author) / Maikap, S. (author) / Shen, K. W. (author) / Wang, W. C. (author)

Published in:

APPLIED SURFACE SCIENCE ; 254 ; 6144-6146

Publication date:

2008-01-01

Size:

3 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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